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| 2SK3596-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol VDS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25C Tc=25C Ratings 200 170 30 120 30 30 387 20 5 1.67 135 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W Equivalent circuit schematic Drain(D) Gate(G) Source(S) Tch C Tstg C *1 L=689H, Vcc=48V *2 Tch< 150C *3 IF < -ID, -di/dt=50A/s, Vcc < BVDSS, Tch < 150C = = = = *4 VDS < 200V *5 VGS=-30V = Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=200V VGS=0V VDS=160V VGS=0V VGS=30V VDS=0V ID=15A VGS=10V ID=15A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=15A VGS=10V RGS=10 VCC=100V ID=30A VGS=10V L=100H Tch=25C IF=30A VGS=0V Tch=25C IF=30A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C Min. 200 3.0 Typ. Max. 5.0 25 250 100 66 Units V V A nA m S pF 10 50 12.5 25 1960 2940 260 390 18 27 20 30 17 26 53 80 19 29 51 76.5 15 22.5 16 24 30 1.10 1.65 0.19 1.4 ns nC A V s C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 75.0 Units C/W C/W www.fujielectric.co.jp/denshi/scd 1 2SK3596-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=30A 500 200 175 400 150 125 100 75 50 100 25 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 300 EAV [mJ] PD [W] 200 Tc [C] starting Tch [C] Typical Output Characteristics ID=f(VDS):80s Pulse test,Tch=25C 120 20V 100 10V 8V 80 7.5V 10 100 Typical Transfer Characteristic ID=f(VGS):80s Pulse test, VDS=25V,Tch=25C ID [A] 60 7.0V 40 6.5V 6.0V ID[A] 1 20 VGS=5.5V 0 0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10 0.1 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80s Pulse test, VDS=25V,Tch=25C 100 0.20 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80s Pulse test, Tch=25C 0.15 VGS= 6.0V 5.5V 6.5V 7.0V RDS(on) [ ] 10 7.5V 8V 0.10 10V 20V gfs [S] 1 0.05 0.1 0.1 0.00 1 10 100 0 20 40 60 80 100 120 ID [A] ID [A] 2 2SK3596-01L,S,SJ FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=15A,VGS=10V 200 180 160 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A RDS(on) [ m ] VGS(th) [V] 140 120 100 80 60 typ. 40 20 0 -50 -25 0 25 50 75 100 125 150 max. max. 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [C] Tch [C] Typical Gate Charge Characteristics VGS=f(Qg):ID=30A, Tch=25C 10 14 12 10 0 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss 10 Vcc= 100V VGS [V] 8 6 C [nF] Coss 10 4 2 0 0 10 20 30 40 50 60 70 80 -1 Crss 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80s Pulse test,Tch=25C 100 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V, VGS=10V, RG=10 tf 2 10 10 td(off) IF [A] t [ns] td(on) 1 1 10 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3596-01L,S,SJ Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 2 FUJI POWER MOSFET 10 1 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C. Vcc=48V 10 Avalanche current IAV [A] Single Pulse 10 1 Zth(ch-c) [C/W] 10 -1 10 0 10 -2 10 -1 10 -3 10 -6 -2 10 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 t [sec] tAV [sec] Outline Drawings (mm) FUJI POWER MOS FET OUT VIEW FUJI POWER MOS FET OUT VIEW FUJI POWER MOS FET See Note: 1. See Note: 1. Trademark Fig. 1. 4 See Note: 1. Trademark Trademark Fig. 1. Lot No. Lot No. Type name Lot No. Type name Type name PRE-SOLDER Fig. 1. Fig. 1. CONNECTION 1 4 2 3 GATE DRAIN SOURCE Solder Plating CONNECTION 1 42 3 GATE DRAIN SOURCE Solder Plating Pre-Solder CONNECTION Pre-Solder Notes 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Notes 1. ( ) : Reference dimensions. Note: 1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. 1 2 3 1 GATE 2 DRAIN 3 SOURCE Note: 1. Guaranteed mark of avalanche ruggedness. Note: 1. Guaranteed mark of avalanche ruggedness. DIMENSIONS ARE IN MILLIMETERS. 4 |
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